µPlasmaPrint ALD add-on

The standard µPlasmaPrint Station can be upgraded towards a µPlasmaPrint Atomic Layer Deposition (ALD) station:

ALD is based on alternate pulses of a precursor and a reactant or oxidant. Therefore µPlasmaPrint ALD can be enabled through the integration of a precursor dosing module. ALD reactions are achieved by the alternate shifting of both heads (plasma and precursor) over the substrate. Both plasma and precursor head are separated from each other and from the environment by means of a nitrogen curtain system, in order to exclude reactions with each other and with moisture from environment. The deposition occurs selectively since the oxidant exposure occurs in a patterned manner (µPlasma). Succesfull deposition of high quality titanium dioxide has already been achieved. 

Additionally, substrate and gas feed line heating have to be installed.

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μPlasmaPrinting Station

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µPlasmaPrint ALD add-on

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InnoPhysics ... 
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.... commercializes its proprietary µPlasmaPrint technology

 

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InnoPhysics B.V.
Fransebaan 592a
5627 JM Eindhoven, the Netherlands
phone +31 (0) 40 248 4774
Chamber of commerce 17 19 4772

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InnoPhysics B.V.
Fransebaan 592a, 5627 JM Eindhoven, the Netherlands
phone +31 (0) 40 248 4774
Chamber of commerce 17 19 4772
© 2017 InnoPhysics B.V.. All Rights Reserved.